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| AP2030SD Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching G2 S2 G1 S1 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID D1 20V 60m 2.6A -20V 80m -2.3A D2 PDIP-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 20 12 2.6 2.1 15 2 0.016 -55 to 150 -55 to 150 P-channel -20 12 -2.3 -1.8 -10 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200728042 AP2030SD N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.037 Max. Units 60 90 1.2 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2.6A VGS=2.5V, ID=1.8A 3.6 9 1 4 6.5 14 20 15 300 255 115 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150 C) o VDS=VGS, ID=250uA VDS=5V, ID=2.6A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=12V ID=2.6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=6,VGS=4.5V RD=10 VGS=0V VDS=8V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25, IS=1.7A, VGS=0V Min. - Typ. - Max. Units 1.7 1.2 A V Forward On Voltage 2 AP2030SD P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) o Drain-Source Leakage Current (T j=150 C) o Test Conditions VGS=0V, ID=250uA VGS=-4.5V, I D=-2.2A VGS=-2.5V, I D=-1.8A VDS=VGS, I D=-250uA VDS=-5V, ID=-2.2A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=12V ID=-2.2A VDS=-6V VGS=-4.5V VDS=-10V ID=-2.2A RG=6,VGS=-4.5V RD=4.5 VGS=0V VDS=-15V f=1.0MHz Min. -20 -0.5 - Typ. -0.037 Max. 80 135 -1 -1 -25 100 10 25 50 30 - Units V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, I D=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss 2.7 11.5 3.2 1.5 940 440 130 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25, I S=-1.8A, VGS=0V Min. - Typ. -0.75 Max. -1.7 -1.2 Units A V Forward On Voltage2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad. AP2030SD N-Channel 25 25 4.5V 4.0V 20 4.5V 3.5V 20 3.5V ID , Drain Current (A) ID , Drain Current (A) 3.0V 15 15 3,0V 10 10 2.5V 5 V GS =2.5V T C =25 C o 5 V GS =2. 0 V T C =150 o C 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.8 65 I D =2.6A T C =25 1.6 I D =2.6A V GS =4.5V 55 Normalized R DS(ON) 2 3 4 5 60 1.4 RDS(ON) (m ) 1.2 50 1.0 45 0.8 40 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP2030SD N-Channel 3 2.4 1.8 ID , Drain Current (A) 2 PD (W) 1 0 25 50 75 100 125 150 1.2 0.6 0 0 50 100 150 T c , Case Temperature ( o C) T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thja) 0.2 10 1ms 10ms ID (A) 1 0.1 0.1 0.05 0.02 100ms 1s 0.01 0.01 Single Pulse PDM 0.1 10s DC T C =25 o C Single Pulse t T Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=90oC/W 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP2030SD N-Channel f=1.0MHz 6 1000 5 VGS , Gate to Source Voltage (V) I D =2.6A V DS =10V Ciss 4 3 C (pF) Coss 100 Crss 2 1 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1.5 10 1 T j =150 o C 1 VGS(th) (V) 0.5 IS(A) T j =25 o C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 0 50 100 150 V SD (V) T j ,Junction Temperature ( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP2030SD N-Channel VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G + 4..5V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D G S + 0.5 x RATED VDS Q GS Q GD VGS 1~ 3 mA I G I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform AP2030SD P-Channel 25 25 -4.5V -4.0V -3.5V 20 -4.5V -4.0V 20 -3.5V -ID , Drain Current (A) -3,0V -ID , Drain Current (A) 15 15 -3,0V 10 10 V GS = - 2.5V 5 V GS = - 2.5V 5 T C =25 o C 0 0 1 2 3 4 5 6 T C =150 o C 0 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 95 I D =-2.2A T C =25 I D =-2.2A 1.6 V GS = -4.5V 90 85 RDS(ON) (m ) 80 Normalized RDS(ON) 1.4 75 1.2 70 1 65 60 0.8 55 0.6 50 2 3 4 5 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP2030SD P-Channel 2.4 3 1.8 -ID , Drain Current (A) 2 PD (W) 1 0 25 50 75 100 125 150 1.2 0.6 0 0 50 100 150 T c , Case Temperature ( o C) T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 10 1ms 10ms -ID (A) 1 Normalized Thermal Response (R thja) 0.2 0.1 0.1 0.05 100ms 1s 0.02 0.01 PDM 0.01 Single Pulse t T 0.1 10s DC T C =25 o C Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=90oC/W 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP2030SD P-Channel 6 10000 f=1.0MHz 5 -VGS , Gate to Source Voltage (V) I D =-2.2A V DS =-6V 1000 4 Ciss Coss 3 2 C (pF) 100 Crss 1 0 0 2 4 6 8 10 12 14 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 1 0.8 10 T j =150 o C -VGS(th) (V) 1.3 1.5 -IS(A) T j =25 o C 1 0.6 0.4 0.1 0.2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 -50 0 50 100 150 -V SD (V) T j ,Junction Temperature ( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP2030SD P-Channel VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS RG G 10% S -4.5 V VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG -4.5V D G S -1~-3mA I G 0.3 x RATED VDS QGS QGD VGS ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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